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      1. Single-Chip AFM
      2. Small sample AFM
      3. Large sample AFM
      4. Biology AFM
      5. Photoinduced Force Microscope
      6. Scanning Thermal Microscopy
      7. Scanwave Impedance Microscopy
      8. AFM In-SEM
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      1. D series
      2. P series
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      1. Zeta series
      2. White light interferometer
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      1. Single Spot Thickness
      2. Microscopic-Spot Thickness
      3. Automated Thickness Mapping
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    5. +
      1. SPR Microscopy
      2. Surface plasmon resonance
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    7. +
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    1. +
      1. Nano strecher
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    3. +
      1. In-SEM Manipulation
      2. In-SEM Nanoindentor
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      1. Small R&D platform
      2. Manual Probe Station
      3. Automated Probe Station
      4. High Power Probe Station
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      1. Needles&Accessories
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      1. In-SEM Atomic Microscopy
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      1. In-SEM Nanoindentor
      2. In-SEM Nano Manipulation
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      1. In-Situ Chips&Holder
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      1. Nanoimprinter Research
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      1. PLD Pulse Laser Deposition
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      1. Passive isolation station
      2. Active isolation station
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    +
      1. AFM Probes
      2. AFM Standard
      3. AFM Sample holder
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      1. Silicon Nitride Film Window
      2. Quantifoil
      3. TEM Accessories
      4. SEM Accessories
      5. X-ray Accessories
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      1. GGB Needles
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      1. Grating mold
      2. Pillar mold
      3. Hole mold
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    5. +
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AFM Substrates
Brand ：mix
Model ：Multi
Keywords ：SPM substrates
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AFM Substrates



Modes


HOPG

ZYA

10*10*1.0mm,Both side

12*12*1.0mm,Both side

ZYB

7*7*1.0mm,Single side

10*10*1.0mm,Both side

12*12*1.0mm,Both side

ZYD

12*12*1.0mm,Single side

Metal Substrate

SPM Metal Substrate

Stainless Steel，Thickness：0.91mm，Diameter：6mm-20mm

Gold coating Metal Substrate

Au Thickness：250nm,Thickness:0.68-0.84mm，Diameter：10mm-20mm

Mica

V-1 Mica

AFM substrate，0.15-0.21 thickness，9-75mm

Gold Coating Mica

150nm Au Thickness，2.4*1.6cm，1.4*1.1cm，2.4*2.1cm

Silicon

silicon substrate

525µm,10x10mm/20x20mm/2 inches/4寸inches

Au coating Silicon

10x 10mm-4，Au thickness100nm/300nm

SiN

4inches，Thickness:300nm

SiO2

4inches，300nm SiO2,Single side RE doped p-type silicon separation / single side RE doped p-type silicon / silicon dioxide