TGZ1/TGZ2/TGZ3/TGZ4/TGS1，Z Calibration

Si substrate，SiO2 layer

Period：3±0.1 µm，Size：5x5x0.5 mm，Effective Area：Center：3x3 mm

Optional：PTB certificate

TGZ1

20.0±1.5 nm（Height）

TGZ2

110±2 nm（Height）

TGZ3

520±3 nm（Height）

TGZ4

1517± 20nm（Height）

TGT1：SPM 3-D calibration NT-MDT，Probe shape，Radius Calibration

Si substrate

Period：3±0.05 µm，Size：5x5x0.5 mm，Effective Area：2x2mm

TGT1

Degree：50+-10°,Radius：<=10nm，Height：0.3-0.5µm

TGG1：

SPM calibration in X or Y axis;
- detection of lateral and vertical scanner nonlinearity;
- detection of angular distortion;
- tip characterization.

Si

Period：3±0.05 µm，Size：5x5x0.5 mm，Effective Area：：3x3mm

TGG1

1- D array of triangular steps (in X or Y direction) having precise linear and angular sizes

TGX1：lateral calibration of SPM scanners

detection of lateral non-linearity, hysteresis, creep, and cross-coupling effects;

determination of the tip aspect ratio.

Period：3±0.05 µm，Size：5x5x0.5 mm，Active area：3x3mm

TGX1

Test grating TGX1 is intended for lateral calibration of SPM scanners, detection of lateral non-linearity, hysteresis, creep, and cross-coupling effects, determination of the tip aspect ratio.

TipCheck

The TipCheck is an SPM sample for fast and convenient determination of the AFM tip condition. It offers a fast and easy way to compare and categorize different AFM probes with respect to tip apex shape and sharpness.

TipCheck

The die size of the TipCheck is 5x5mm. It is available either mounted onto a 12mm metal disc or unmounted (TipCheck-UM).

SHS

Size：8.0x8.2x0.5 mm

SHS-01

Material：SiO2，Height：100nm

SHS-1

Material：SiO2，Height：1000nm

STEP-OX-0.1

Material：SiO2，Coating：Cr，Height：100nm

STEP-OX-0.2

Material：SiO2，Coating：Cr，Height：100nm

STEP-OX-0.5

Material：SiO2，Coating：Cr，Height：500nm

STEP-OX-1

Material：SiO2，Coating：Cr，Height：1000nm

STEP-Si-5

Material：Si，Height：5000nm

STEP-Si-10

Material：Si，Height：10000nm

STEP-Si-25

Material：Si，Height：25000nm

PA01

Sample for characterization of tip shape with hard sharp pyramidal nanostructures. The pyramids are triangular with base length in the range 50 – 100 nm and height 50 – 150 nm. The radius of curvature of the sharpest edges is below 5 nm.

PA01

• pyramid base 50 - 100 nm
• pyramid height 50 - 150 nm
• smallest edge radii < 5 nm
• active area 5 x 5 mm
• chip dimensions 5 x 5 x 0.3 mm
• available mounted on 12 mm metal plate (PA01) or unmounted (PA01/NM) 

TGF11 

The TGF calibration gratings feature one-dimensional arrays of trapezoidal steps etched into a silicon substrate. The sidewalls of the structures are very smooth and planar surfaces with well-defined orientation formed by the (111) crystallographic planes in monocrystalline silicon. The sidewalls and the horizontal top surfaces form a well defined angle.

TGF11

• array pitch 10 µm, accuracy 0.1 µm
• edge angle 54.74°
• 3 x 3 mm
• step height ~ 1 µm (approximate value, not for vertical calibration purposes)
• chip dimensions 5 x 5 x 0.3 mm

HS-MG

Atomic Force Microscopy has become a valuable tool not only for visualization but also for performing accurate measurements on the nanometer and micrometer scale. In order to make the most of their measurement capabilities, AFM systems need to be properly calibrated.

Period：5&10µm，Size：5x5 mm

Pillar/Hole：500 µm x500 µm，Line： 500 µm x500 µm，Pillar/Hole：1 x1mm

HS-20MG

20 nm（Height）

HS-100MG

100 nm（Height）

HS-500MG

500 nm（Height）

CS-20NG

CS-20NG is an advanced XYZ calibration nanogrid that enables calibration up to the nanometer level. It features silicon dioxide structure arrays on a 5x5 mm silicon chip. The fabrication process guarantees excellent uniformity of the structures across the chip. This in turn ensures easy and reliable X, Y and Z axis calibration of your AFM system.

CS-20MG

• Square holes and pillars with 10µm pitch arranged in a 1x1mm square
• Circular pillars and holes, and lines in the x- and y- direction with a 5µm pitch arranged in a 500x500µm square
• Circular holes with a 500nm pitch arranged in a 100x100µm square
• 20 nm（Height）

TGX：

The silicon calibration grating from the TGX series is an array of square holes with sharp undercut edges formed by anisotropic etching along the (111) crystallographic planes of silicon. The typical radius of the edges is less than 5 nm.

• pitch 3 µm, accuracy 0.1 µm
• edge radii < 5 nm
• step height ~ 1 µm (approximate value, not for vertical calibration purposes)
• active area 1 x 1 mm
• chip dimensions 5 x 5 x 0.3 mm
• available mounted on 12 mm plate (TGX) or unmounted (TGX/NM)

TGX

1µm（Height）

TGXYZ

he step height value is calibrated over the whole active area. The actual step height, indicated on the individual unit label, may differ slightly from the nominal value. 

• step height 20 nm, accuracy 2%
• array pitch 5 and 10 µm, accuracy 0.1 µm
• active area 1 x 1 mm
• chip dimensions 5 x 5 x 0.3 mm
• available mounted on a 12 mm metal plate (TGXYZ02) or unmounted (TGXYZ02/NM)
• versions of the same grating with step height 100 nm (TGXYZ02) and 500 nm (TGXYZ03) also available

TGXYZ01

20.0±2 nm（Height）

TGXYZ02

100±3 nm（Height）

TGXYZ03

500±3 nm（Height）